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AFGY100T65SPD

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The AFGY100T65SPD from onsemi is a IGBT with Gate Emitter Voltage 20 V, Saturated Collector Emitter Voltage 1.6 V, DC Collector Current 100 A, Peak Collector Current 300 A, DC Forward Current 120 A. More details for AFGY100T65SPD can be seen below.

Product Specifications

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Product Details

  • Part Number
    AFGY100T65SPD
  • Manufacturer
    onsemi
  • Description
    650 V Field Stop Trench IGBT

General

  • Types
    Single Switch IGBT, Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    20 V
  • Saturated Collector Emitter Voltage
    1.6 V
  • DC Collector Current
    100 A
  • Peak Collector Current
    300 A
  • DC Forward Current
    120 A
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    660 W
  • Package Type
    Through Hole
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