Note : Your request will be directed to onsemi.
The AFGY120T65SPD from onsemi is a IGBT with Gate Emitter Voltage 20 V, Saturated Collector Emitter Voltage 1.6 V, DC Collector Current 120 A, Peak Collector Current 360 A, DC Forward Current 160 A. More details for AFGY120T65SPD can be seen below.
650 V Insulated Gate Bipolar Transistor
1200 V IGBT Power Module
650 V Field-Stop Trench IGBT
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