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FGAF40N60UFD

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FGAF40N60UFD Image

The FGAF40N60UFD from onsemi is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2.3 V, DC Collector Current 20 A, Junction Temperature -55 to 150 Degree C, Gate Emitter Leakage Current -01 to 01 uA. More details for FGAF40N60UFD can be seen below.

Product Specifications

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Product Details

  • Part Number
    FGAF40N60UFD
  • Manufacturer
    onsemi
  • Description
    600 V Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    2.3 V
  • DC Collector Current
    20 A
  • Junction Temperature
    -55 to 150 Degree C
  • Gate Emitter Leakage Current
    -01 to 01 uA
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    100 W
  • Package
    TO-3PF-3L
  • Package Type
    Through Hole
  • Applications
    AC & DC moter control, General purpose inverter, Robotics, servo controls
  • RoHS Compliant
    Yes

Technical Documents
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