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FGH40N60SM_F085

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FGH40N60SM_F085 Image

The FGH40N60SM_F085 from onsemi is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.9 to 2.5 V, DC Collector Current 80 A, DC Forward Current 20 to 40 A, Junction Temperature -55 to 175 Degree C. More details for FGH40N60SM_F085 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FGH40N60SM_F085
  • Manufacturer
    onsemi
  • Description
    600 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.9 to 2.5 V
  • DC Collector Current
    80 A
  • DC Forward Current
    20 to 40 A
  • Junction Temperature
    -55 to 175 Degree C
  • Gate Emitter Leakage Current
    -0.4 to 0.4 uA
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    349 W
  • Package
    TO-247-3
  • Package Type
    Through Hole
  • Applications
    Automotive Chargers, Converters, High Voltage Auxiliaries, Inverters, SMPS, PFC, UPS
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes

Technical Documents
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