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FGHL50T65LQDT

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FGHL50T65LQDT Image

The FGHL50T65LQDT from onsemi is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.15 V, DC Collector Current 50 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current -04 to 04 uA. More details for FGHL50T65LQDT can be seen below.

Product Specifications

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Product Details

  • Part Number
    FGHL50T65LQDT
  • Manufacturer
    onsemi
  • Description
    650 V Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.15 V
  • DC Collector Current
    50 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    -04 to 04 uA
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    341 W
  • Package
    TO-247-3LD
  • Package Type
    Through Hole
  • Applications
    Solar Inverter, UPS, ESS, PFC, Converters
  • RoHS Compliant
    Yes

Technical Documents
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