The NGTD23T120F2 from onsemi is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.9 V, DC Collector Current 25 A, Junction Temperature -55 to 175 Degree C, Collector Emitter Voltage 1200 V. More details for NGTD23T120F2 can be seen below.