NGTG12N60TF1G

IGBT by onsemi (193 more products)

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The NGTG12N60TF1G from onsemi is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.4 V, DC Collector Current 12 A, Junction Temperature 150 Degree C, Collector Emitter Voltage 600 V. More details for NGTG12N60TF1G can be seen below.

Product Specifications

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Product Details

Part Number
NGTG12N60TF1G
Manufacturer
onsemi
Description
600 V, Single Switch IGBT Module

General

Types

Single Switch IGBT
No. of Transistors

Single
Gate Emitter Voltage

-20 to 20 V
Saturated Collector Emitter Voltage

1.4 V
DC Collector Current

12 A
Junction Temperature

150 Degree C
Collector Emitter Voltage

600 V
Power Dissipation

54 W
Package

TO-3PF-3L
Package Type

Through Hole
Applications

Power factor correction of white goods appliance, General purpose inverter
RoHS Compliant

Yes