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SGP10N60RUFD

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SGP10N60RUFD Image

The SGP10N60RUFD from onsemi is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2.2 V, DC Collector Current 10 A, DC Forward Current 12 to 24 A, Junction Temperature -55 to 150 Degree C. More details for SGP10N60RUFD can be seen below.

Product Specifications

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Product Details

  • Part Number
    SGP10N60RUFD
  • Manufacturer
    onsemi
  • Description
    600 V, Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    2.2 V
  • DC Collector Current
    10 A
  • DC Forward Current
    12 to 24 A
  • Junction Temperature
    -55 to 150 Degree C
  • Gate Emitter Leakage Current
    -0.1 to 0.1 uA
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    75 W
  • Package
    TO-220-3
  • Package Type
    Through Hole
  • Applications
    Motor control, UPS, General inverter
  • RoHS Compliant
    Yes

Technical Documents
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