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RJP4013ASP

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RJP4013ASP Image

The RJP4013ASP from Renesas is a IGBT with Gate Emitter Voltage -6 to 6 V, Saturated Collector Emitter Voltage 4.5 V, DC Collector Current 150 A, Junction Temperature -40 to 150 Degree C, Gate Emitter Leakage Current -10 to 10 uA. More details for RJP4013ASP can be seen below.

Product Specifications

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Product Details

  • Part Number
    RJP4013ASP
  • Manufacturer
    Renesas
  • Description
    400 V, Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -6 to 6 V
  • Saturated Collector Emitter Voltage
    4.5 V
  • DC Collector Current
    150 A
  • Junction Temperature
    -40 to 150 Degree C
  • Gate Emitter Leakage Current
    -10 to 10 uA
  • Collector Emitter Voltage
    400 V
  • Package
    SOP
  • Package Type
    Surface Mount
  • Applications
    Strobe flash for cameras
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
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