The MG6404WZ from ROHM Semiconductor is a Field Stop Trench IGBT that is ideal for solar inverters, uninterrupted power supplies (UPS), welding, and power factor correction (PFC) applications. It has a collector-emitter breakdown voltage of over 650 V, a gate threshold voltage of 6 V, and a saturated collector-emitter voltage of 1.5 V. This IGBT has a collector current of up to 40 A and a gate-emitter leakage current of ±200 nA. It is based on trench light punch-through design that offers high switching speed while maintaining low switching loss in a compact package. This trench IGBT can withstand short-circuit current surges up to 2 µs. It is available as a die that measures 4.2 x 3.2 mm.