The MG7901WZ from ROHM Semiconductor is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.4 V, DC Collector Current 40 A, Junction Temperature -40 to 175 Degree C, Gate Emitter Leakage Current -0.5 to 0.5 uA. More details for MG7901WZ can be seen below.