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RGS80TSX2D

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RGS80TSX2D Image

The RGS80TSX2D from ROHM Semiconductor is a IGBT with Gate Emitter Voltage 30 V, Saturated Collector Emitter Voltage 1.70 to 2.20 V, DC Collector Current 40 to 80 A, DC Forward Current 40 to 80 A, Gate Emitter Leakage Current 0.5 uA. More details for RGS80TSX2D can be seen below.

Product Specifications

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Product Details

  • Part Number
    RGS80TSX2D
  • Manufacturer
    ROHM Semiconductor
  • Description
    1200 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    30 V
  • Saturated Collector Emitter Voltage
    1.70 to 2.20 V
  • DC Collector Current
    40 to 80 A
  • DC Forward Current
    40 to 80 A
  • Gate Emitter Leakage Current
    0.5 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    277 to 555 W
  • Package
    TO-247N
  • Package Type
    Through Hole
  • Applications
    General Inverter, UPS, PV Inverter, Power Conditioner
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
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