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RGSX5TS65HR

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RGSX5TS65HR Image

The RGSX5TS65HR from ROHM Semiconductor is a IGBT with Gate Emitter Voltage 30 V, Saturated Collector Emitter Voltage 1.70 to 2.20 V, DC Collector Current 75 to 114 A, Gate Emitter Leakage Current 0.2 uA, Operating Temperature -40 to 175 Degree C. More details for RGSX5TS65HR can be seen below.

Product Specifications

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Product Details

  • Part Number
    RGSX5TS65HR
  • Manufacturer
    ROHM Semiconductor
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    30 V
  • Saturated Collector Emitter Voltage
    1.70 to 2.20 V
  • DC Collector Current
    75 to 114 A
  • Gate Emitter Leakage Current
    0.2 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    202 to 404 W
  • Package
    TO-247N
  • Package Type
    Through Hole
  • Applications
    Heater for Automotive
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes

Technical Documents
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