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RGW00TS65EHR

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The RGW00TS65EHR from ROHM Semiconductor is a IGBT with Gate Emitter Voltage 30 V, Saturated Collector Emitter Voltage 1.50 to 1.90 V, DC Collector Current 58 to 96 A, DC Forward Current 50 to 84 A, Gate Emitter Leakage Current 0.2 uA. More details for RGW00TS65EHR can be seen below.

Product Specifications

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Product Details

  • Part Number
    RGW00TS65EHR
  • Manufacturer
    ROHM Semiconductor
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    30 V
  • Saturated Collector Emitter Voltage
    1.50 to 1.90 V
  • DC Collector Current
    58 to 96 A
  • DC Forward Current
    50 to 84 A
  • Gate Emitter Leakage Current
    0.2 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    127 to 254 W
  • Package
    TO-247N
  • Package Type
    Through Hole
  • Applications
    Automotive, On & Off Board Chargers, DC-DC Converters, PFC, Industrial Inverter
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes

Technical Documents
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