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RGW60TS65DHR

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The RGW60TS65DHR from ROHM Semiconductor is a IGBT with Gate Emitter Voltage 30 V, Saturated Collector Emitter Voltage 1.50 to 1.90 V, DC Collector Current 39 to 64 A, DC Forward Current 25 to 41 A, Gate Emitter Leakage Current 0.2 uA. More details for RGW60TS65DHR can be seen below.

Product Specifications

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Product Details

  • Part Number
    RGW60TS65DHR
  • Manufacturer
    ROHM Semiconductor
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    30 V
  • Saturated Collector Emitter Voltage
    1.50 to 1.90 V
  • DC Collector Current
    39 to 64 A
  • DC Forward Current
    25 to 41 A
  • Gate Emitter Leakage Current
    0.2 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    89 to 178 W
  • Package
    TO-247N
  • Package Type
    Through Hole
  • Applications
    Automotive, On & Off Board Chargers, DC-DC Converters, PFC, Industrial Inverter
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes

Technical Documents
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