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GSID100A120T2C1A

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The GSID100A120T2C1A from SemiQ is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.90 to 2.30 V, DC Collector Current 100 to 200 A, Peak Collector Current 200 A, Junction Temperature 175 Degree C. More details for GSID100A120T2C1A can be seen below.

Product Specifications

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Product Details

  • Part Number
    GSID100A120T2C1A
  • Manufacturer
    SemiQ
  • Description
    1200 V Hex Channel IGBT Module

General

  • Types
    Hex Channel IGBT
  • No. of Transistors
    Hex
  • Gate Emitter Voltage
    -20 to 20 V
  • Dimensions
    122 x 62 x 21 mm
  • Saturated Collector Emitter Voltage
    1.90 to 2.30 V
  • DC Collector Current
    100 to 200 A
  • Peak Collector Current
    200 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.2 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    800 W
  • Package Type
    Chassis Mount
  • Applications
    Industrial Inverters, Servo Applications
  • RoHS Compliant
    Yes

Technical Documents
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