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GSID150A120S6A4

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The GSID150A120S6A4 from SemiQ is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.90 to 2.20 V, DC Collector Current 150 to 275 A, Peak Collector Current 300 A, Junction Temperature 175 Degree C. More details for GSID150A120S6A4 can be seen below.

Product Specifications

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Product Details

  • Part Number
    GSID150A120S6A4
  • Manufacturer
    SemiQ
  • Description
    1200 V Quad Channel IGBT Module

General

  • Types
    Quad Channel IGBT
  • No. of Transistors
    Quad
  • Gate Emitter Voltage
    -20 to 20 V
  • Dimensions
    106.4 x 61.4 x 30.8 mm
  • Saturated Collector Emitter Voltage
    1.90 to 2.20 V
  • DC Collector Current
    150 to 275 A
  • Peak Collector Current
    300 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.2 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    1035 W
  • Package Type
    Chassis Mount
  • Applications
    3-Level-Applications
  • RoHS Compliant
    Yes

Technical Documents
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