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DG25F12T2

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The DG25F12T2 from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.6 to 2.05 V, DC Collector Current 50 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for DG25F12T2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    DG25F12T2
  • Manufacturer
    StarPower
  • Description
    1200 V Single Switch, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT, Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.6 to 2.05 V
  • DC Collector Current
    50 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    601 W
  • Package
    TO-220
  • Package Type
    Through Hole
  • Applications
    Electronic welder

Technical Documents
View details on the manufacturer's website
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