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GD1000HFX170P2S

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GD1000HFX170P2S Image

The GD1000HFX170P2S from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.95 to 2.5 V, DC Collector Current 1604 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for GD1000HFX170P2S can be seen below.

Product Specifications

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Product Details

  • Part Number
    GD1000HFX170P2S
  • Manufacturer
    StarPower
  • Description
    1700 V Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.95 to 2.5 V
  • DC Collector Current
    1604 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1700 V
  • Power Dissipation
    6250 W
  • Package Type
    Module
  • Applications
    High Power Converter, Wind Power, Auxiliary Inverter

Technical Documents
View details on the manufacturer's website
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