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GD1200HFY120C3S

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GD1200HFY120C3S Image

The GD1200HFY120C3S from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.7 to 2.15 V, DC Collector Current 2230 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for GD1200HFY120C3S can be seen below.

Product Specifications

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Product Details

  • Part Number
    GD1200HFY120C3S
  • Manufacturer
    StarPower
  • Description
    1200 V Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.7 to 2.15 V
  • DC Collector Current
    2230 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    8196 W
  • Package Type
    Module
  • Applications
    High Power Converters, Motor Drivers, AC Inverter Drives

Technical Documents
View details on the manufacturer's website
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