GD1400HFX170P2S

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The GD1400HFX170P2S from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.95 to 2.5 V, DC Collector Current 2342 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for GD1400HFX170P2S can be seen below.

Product Specifications

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Product Details

Part Number
GD1400HFX170P2S
Manufacturer
StarPower
Description
1700 V Field Stop Trench IGBT Module

General

Types

Field Stop Trench IGBT
No. of Transistors

Dual
Gate Emitter Voltage

-20 to 20 V
Saturated Collector Emitter Voltage

1.95 to 2.5 V
DC Collector Current

2342 A
Junction Temperature

175 Degree C
Gate Emitter Leakage Current

0.4 uA
Collector Emitter Voltage

1700 V
Power Dissipation

9370 W
Package Type

Module
Applications

Auxiliary Inverters, High Power Converters, UPS, Wind and Solar Power, Traction Drives