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GD1600SGL170C3S

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GD1600SGL170C3S Image

The GD1600SGL170C3S from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2.3 to 2.75 V, DC Collector Current 3000 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for GD1600SGL170C3S can be seen below.

Product Specifications

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Product Details

  • Part Number
    GD1600SGL170C3S
  • Manufacturer
    StarPower
  • Description
    1700 V Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    2.3 to 2.75 V
  • DC Collector Current
    3000 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1700 V
  • Power Dissipation
    13600 W
  • Package Type
    Module
  • Applications
    AC Inverter Drives, Uninterruptible Power Supply, Wind Turbines

Technical Documents
View details on the manufacturer's website
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