GD600HFX65C2S

IGBT by StarPower (277 more products)

Download Datasheet Request Quote

Note : Your request will be directed to StarPower.

The GD600HFX65C2S from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.45 to 1.9 V, DC Collector Current 768 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for GD600HFX65C2S can be seen below.

Product Specifications

View similar products

Product Details

Part Number
GD600HFX65C2S
Manufacturer
StarPower
Description
650 V Field Stop Trench IGBT Module

General

Types

Field Stop Trench IGBT
No. of Transistors

Dual
Gate Emitter Voltage

-20 to 20 V
Saturated Collector Emitter Voltage

1.45 to 1.9 V
DC Collector Current

768 A
Junction Temperature

175 Degree C
Gate Emitter Leakage Current

0.4 uA
Collector Emitter Voltage

650 V
Power Dissipation

1875 W
Package Type

Module
Applications

Automotive application, Hybrid and electric vehicle, Inverter for motor drive