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GD650HFX170P1S

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GD650HFX170P1S Image

The GD650HFX170P1S from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.9 to 2.45 V, DC Collector Current 1073 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for GD650HFX170P1S can be seen below.

Product Specifications

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Product Details

  • Part Number
    GD650HFX170P1S
  • Manufacturer
    StarPower
  • Description
    1700 V Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.9 to 2.45 V
  • DC Collector Current
    1073 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1700 V
  • Power Dissipation
    4200 W
  • Package Type
    Module
  • Applications
    High Power Converter, Wind and Solar Power, raction Drive

Technical Documents
View details on the manufacturer's website
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