1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. IGBTs
  5. StarPower
  6. GD75FFY120C6SF

GD75FFY120C6SF

Download Datasheet Request Quote

Note : Your request will be directed to StarPower.

GD75FFY120C6SF Image

The GD75FFY120C6SF from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.7 to 2.15 V, DC Collector Current 117 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.1 uA. More details for GD75FFY120C6SF can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    GD75FFY120C6SF
  • Manufacturer
    StarPower
  • Description
    1200 V Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Hex
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.7 to 2.15 V
  • DC Collector Current
    117 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    380 W
  • Package Type
    Module
  • Applications
    Inverter for motor drive, AC and DC servo drive amplifier, Uninterruptible power supply

Technical Documents
View details on the manufacturer's website
View similar products

Latest IGBTs

View more products