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GD800HFL170C3S

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The GD800HFL170C3S from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2.5 to 3.1 V, DC Collector Current 1050 W, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for GD800HFL170C3S can be seen below.

Product Specifications

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Product Details

  • Part Number
    GD800HFL170C3S
  • Manufacturer
    StarPower
  • Description
    1700 V IGBT Module

General

  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    2.5 to 3.1 V
  • DC Collector Current
    1050 W
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1700 V
  • Power Dissipation
    4850 W
  • Package Type
    Module
  • Applications
    High Power Converters, Motor Drivers, Wind Turbines

Technical Documents
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