1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. IGBTs
  5. StarPower
  6. GD800HFY120C3S

GD800HFY120C3S

Download Datasheet Request Quote

Note : Your request will be directed to StarPower.

GD800HFY120C3S Image

The GD800HFY120C3S from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.7 to 2.15 V, DC Collector Current 1203 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for GD800HFY120C3S can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    GD800HFY120C3S
  • Manufacturer
    StarPower
  • Description
    1200 V Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.7 to 2.15 V
  • DC Collector Current
    1203 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    3836 W
  • Package Type
    Module
  • Applications
    High Power Converters, Motor Drivers, AC Inverter Drives

Technical Documents
View details on the manufacturer's website
View similar products

Latest IGBTs

View more products