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STGB40V60F

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STGB40V60F Image

The STGB40V60F from STMicroelectronics is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.8 V, DC Collector Current 40 to 80 A, DC Forward Current 40 to 80 A, Junction Temperature -55 to 175 Degree C. More details for STGB40V60F can be seen below.

Product Specifications

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Product Details

  • Part Number
    STGB40V60F
  • Manufacturer
    STMicroelectronics
  • Description
    600 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.8 V
  • DC Collector Current
    40 to 80 A
  • DC Forward Current
    40 to 80 A
  • Junction Temperature
    -55 to 175 Degree C
  • Gate Emitter Leakage Current
    -0.25 to 0.25 uA
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    283 W
  • Package
    D2PAK
  • Package Type
    Surface Mount
  • Applications
    Welding, Power factor correction, UPS, Solar inverters, Chargers
  • RoHS Compliant
    Yes

Technical Documents
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