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STGW25H120F2

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STGW25H120F2 Image

The STGW25H120F2 from STMicroelectronics is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2.1 V, DC Collector Current 25 to 50 A, Junction Temperature -55 to 175 Degree C, Gate Emitter Leakage Current 0.25 uA. More details for STGW25H120F2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    STGW25H120F2
  • Manufacturer
    STMicroelectronics
  • Description
    1200 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    2.1 V
  • DC Collector Current
    25 to 50 A
  • Junction Temperature
    -55 to 175 Degree C
  • Gate Emitter Leakage Current
    0.25 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    375 W
  • Package
    TO-247
  • Package Type
    Through Hole
  • Applications
    Photovoltaic inverters, Uninterruptible power supply, Welding, Power factor correction, High frequency converters
  • RoHS Compliant
    Yes

Technical Documents
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