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GT20J121

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GT20J121 Image

The GT20J121 from Toshiba is a IGBT with Gate Emitter Voltage 25 V, Saturated Collector Emitter Voltage 1.25 to 1.80 V, DC Collector Current 20 A, Junction Temperature 150 Degree C, Gate Emitter Leakage Current 0.1 uA. More details for GT20J121 can be seen below.

Product Specifications

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Product Details

  • Part Number
    GT20J121
  • Manufacturer
    Toshiba
  • Description
    600 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    25 V
  • Saturated Collector Emitter Voltage
    1.25 to 1.80 V
  • DC Collector Current
    20 A
  • Junction Temperature
    150 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    2 to 40 W
  • Package
    TO-220SIS
  • Package Type
    Through Hole
  • Applications
    Dedicated to Current-Resonant Inverter Switching Applications, Dedicated to Partial-Switching Power Factor Correction (PFC) Applications
  • RoHS Compliant
    Yes

Technical Documents
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