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GT20N135SRA

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GT20N135SRA Image

The GT20N135SRA from Toshiba is a IGBT with Gate Emitter Voltage 25 V, Saturated Collector Emitter Voltage 1.60 to 2.40 V, DC Collector Current 20 to 40 A, DC Forward Current 20 to 40 A, Junction Temperature 175 Degree C. More details for GT20N135SRA can be seen below.

Product Specifications

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Product Details

  • Part Number
    GT20N135SRA
  • Manufacturer
    Toshiba
  • Description
    1350 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    25 V
  • Saturated Collector Emitter Voltage
    1.60 to 2.40 V
  • DC Collector Current
    20 to 40 A
  • DC Forward Current
    20 to 40 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Collector Emitter Voltage
    1350 V
  • Power Dissipation
    312 W
  • Package
    TO-247
  • Package Type
    Through Hole
  • Applications
    Dedicated to Voltage-Resonant Inverter Switching Applications, Dedicated to Soft Switching Applications, Dedicated to Induction Cooktops and Home Appliance Applications
  • RoHS Compliant
    Yes

Technical Documents
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