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GT30J121

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GT30J121 Image

The GT30J121 from Toshiba is a IGBT with Gate Emitter Voltage 20 V, Saturated Collector Emitter Voltage 2 to 2.45 V, DC Collector Current 30 A, Junction Temperature 150 Degree C, Gate Emitter Leakage Current 0.5 uA. More details for GT30J121 can be seen below.

Product Specifications

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Product Details

  • Part Number
    GT30J121
  • Manufacturer
    Toshiba
  • Description
    600 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    20 V
  • Saturated Collector Emitter Voltage
    2 to 2.45 V
  • DC Collector Current
    30 A
  • Junction Temperature
    150 Degree C
  • Gate Emitter Leakage Current
    0.5 uA
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    170 W
  • Package
    TO-3P(N)
  • Package Type
    Through Hole
  • Applications
    High Power Switching Applications, Fast Switching Applications
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
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