1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. IGBTs
  5. Toshiba
  6. GT30J122A

GT30J122A

Download Datasheet Request Quote

Note : Your request will be directed to Toshiba.

GT30J122A Image

The GT30J122A from Toshiba is a IGBT with Gate Emitter Voltage 25 V, Saturated Collector Emitter Voltage 1.7 to 2.8 V, DC Collector Current 30 A, Junction Temperature 150 Degree C, Gate Emitter Leakage Current 0.1 uA. More details for GT30J122A can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    GT30J122A
  • Manufacturer
    Toshiba
  • Description
    600 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    25 V
  • Saturated Collector Emitter Voltage
    1.7 to 2.8 V
  • DC Collector Current
    30 A
  • Junction Temperature
    150 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    120 W
  • Package
    TO-3P(N)
  • Package Type
    Through Hole
  • Applications
    Dedicated to Current-Resonant Inverter Switching Applications, Dedicated to Partial-Switching Power Factor Correction (PFC) Applications
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
View similar products

Latest IGBTs

View more products