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GT40QR21

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GT40QR21 Image

The GT40QR21 from Toshiba is a IGBT with Gate Emitter Voltage 25 V, Saturated Collector Emitter Voltage 1.50 to 2.70 V, DC Collector Current 35 to 40 A, DC Forward Current 20 A, Junction Temperature 175 Degree C. More details for GT40QR21 can be seen below.

Product Specifications

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Product Details

  • Part Number
    GT40QR21
  • Manufacturer
    Toshiba
  • Description
    1200 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    25 V
  • Saturated Collector Emitter Voltage
    1.50 to 2.70 V
  • DC Collector Current
    35 to 40 A
  • DC Forward Current
    20 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    230 W
  • Package
    TO-3P(N)
  • Package Type
    Through Hole
  • Applications
    Dedicated to Voltage-Resonant Inverter Switching Applications
  • RoHS Compliant
    Yes

Technical Documents
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