VS-GT300YH120N

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VS-GT300YH120N Image

The VS-GT300YH120N from Vishay is a IGBT with Gate Emitter Voltage 20 V, DC Collector Current 300 to 400 A, DC Forward Current 300 to 412 A, Junction Temperature -40 to 175 Degree C, Gate Emitter Leakage Current 0.25 uA. More details for VS-GT300YH120N can be seen below.

Product Specifications

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Product Details

  • Part Number
    VS-GT300YH120N
  • Manufacturer
    Vishay
  • Description
    1200 V ,Half Bridge IGBT Module

General

  • Types
    Half Bridge IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    20 V
  • DC Collector Current
    300 to 400 A
  • DC Forward Current
    300 to 412 A
  • Junction Temperature
    -40 to 175 Degree C
  • Gate Emitter Leakage Current
    0.25 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    106 to 1250 W
  • Package
    Dual INT-A-PAK
  • Package Type
    Chassis Mount
  • RoHS Compliant
    Yes

Technical Documents

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