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VS-GT55NA120UX

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VS-GT55NA120UX Image

The VS-GT55NA120UX from Vishay is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2.39 V, DC Collector Current 47 A, DC Forward Current 59 to 87 A, Junction Temperature -40 to 150 Degree C. More details for VS-GT55NA120UX can be seen below.

Product Specifications

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Product Details

  • Part Number
    VS-GT55NA120UX
  • Manufacturer
    Vishay
  • Description
    1200 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    2.39 V
  • DC Collector Current
    47 A
  • DC Forward Current
    59 to 87 A
  • Junction Temperature
    -40 to 150 Degree C
  • Gate Emitter Leakage Current
    -0.25 to 0.25
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    163 to 291 W
  • Package
    SOT-227
  • Package Type
    Surface Mount
  • Applications
    UPS, SMPS
  • RoHS Compliant
    Yes

Technical Documents
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