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MG50HF12LEC1

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The MG50HF12LEC1 from Yangjie Electronic Technology is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 3.1 to 3.8 V, DC Collector Current 50 A, Peak Collector Current 100 A, Junction Temperature -40 to 125 Degree C. More details for MG50HF12LEC1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    MG50HF12LEC1
  • Manufacturer
    Yangjie Electronic Technology
  • Description
    1200 V, Dual Switch IGBT Module

General

  • Types
    Dual Switch IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    3.1 to 3.8 V
  • DC Collector Current
    50 A
  • Peak Collector Current
    100 A
  • Junction Temperature
    -40 to 125 Degree C
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    400 W
  • Package
    Module
  • Industry
    Commercial, Industrial
  • Applications
    High frequency drivers, Solar inverters, UPS (Uninterruptible Power Supplies), Electric welding machine
  • RoHS Compliant
    Yes

Technical Documents
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