MG75P12E2

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The MG75P12E2 from Yangjie Electronic Technology is a Hex-Channel IGBT that is ideal for motor drivers, AC and DC servo drive amplifiers, and UPS applications. It has a collector-to-emitter voltage of up to 1200 V, a gate-emitter threshold voltage of 5.8 V, and a saturated collector-to-emitter voltage of 1.85 V. This IGBT has a DC collector current of less than 75 A. It has low switching losses with fast and soft recovery anti-parallel freewheeling diode for reduced power dissipation and improved current handling capabilities. This RoHS-compliant IGBT has a low collector-emitter saturation voltage, exhibits positive temperature coefficient, and offers high short circuit capability in a low inductance case. It is available in a module that measures 122.5 x 62.5 x 20.5 mm.

Product Specifications

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Product Details

  • Part Number
    MG75P12E2
  • Manufacturer
    Yangjie Electronic Technology
  • Description
    1200 V Hex-Channel IGBT for UPS Applications

General

  • Types
    Hex Channel IGBT
  • No. of Transistors
    Hex
  • Gate Emitter Voltage
    -20 to 20 V
  • Dimensions
    122.5 x 62.5 x 20.5 mm
  • Saturated Collector Emitter Voltage
    1.85 V
  • DC Collector Current
    75 A
  • Peak Collector Current
    150 A
  • Junction Temperature
    -40 to 150 Degree C
  • Gate Emitter Leakage Current
    0.4 µA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    476 W
  • Package
    Chassis Mount
  • Package Type
    Module
  • Industry
    Commercial, Industrial
  • Applications
    Motor Drivers, AC and DC servo drive amplifier, UPS (Uninterruptible Power Supplies)
  • RoHS Compliant
    Yes

Technical Documents

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