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AP2N075EN

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The AP2N075EN from Advanced Power Electronics Corp is a MOSFET with Continous Drain Current 2.8 to 3.5 A, Drain Source Resistance 75 to 125 milli-ohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.5 to 1.2 V. Tags: Surface Mount. More details for AP2N075EN can be seen below.

Product Specifications

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Product Details

  • Part Number
    AP2N075EN
  • Manufacturer
    Advanced Power Electronics Corp
  • Description
    1.25 W, 20 V , N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    2.8 to 3.5 A
  • Drain Source Resistance
    75 to 125 milli-ohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.5 to 1.2 V
  • Gate Charge
    6.5 to 10.4 nC
  • Switching Speed
    6 to 14 ns
  • Power Dissipation
    1.25 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23S
  • Note
    Input Capacitance :- 832 pF
View details on the manufacturer's website
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