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AP3310GH

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The AP3310GH from Advanced Power Electronics Corp is a MOSFET with Continous Drain Current -6.2 to -10 A, Drain Source Resistance 150 to 250 milli-ohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -0.5 V. Tags: Surface Mount. More details for AP3310GH can be seen below.

Product Specifications

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Product Details

  • Part Number
    AP3310GH
  • Manufacturer
    Advanced Power Electronics Corp
  • Description
    25 W, -20 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -6.2 to -10 A
  • Drain Source Resistance
    150 to 250 milli-ohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -0.5 V
  • Gate Charge
    6 nC
  • Switching Speed
    6 to 20 ns
  • Power Dissipation
    25 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-252
  • Note
    Input Capacitance :- 300 pF
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