ESN7407

Note : Your request will be directed to Hunan Jingxin Microelectronics.

The ESN7407 from Hunan Jingxin Microelectronics is a MOSFET with Continous Drain Current -32 to -42 A, Drain Source Resistance 8 to 15 milli-ohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -0.45 to -0.90 V. Tags: Surface Mount. More details for ESN7407 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    ESN7407
  • Manufacturer
    Hunan Jingxin Microelectronics
  • Description
    -20 V, -32 to -42 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -32 to -42 A
  • Drain Source Resistance
    8 to 15 milli-ohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -0.45 to -0.90 V
  • Gate Charge
    45 nC
  • Switching Speed
    18 to 136 ns
  • Power Dissipation
    30 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PDFN3x3-8L
  • Applications
    PWM applications, Load switch, Power management in portable/desktop PCs, DC/DC conversion
  • Note
    Input Capacitance :- 3500 pF

Technical Documents

Latest MOSFETs

View more products