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AP4NA1R5HCST

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The AP4NA1R5HCST from Advanced Power Electronics Corp is a MOSFET with Continous Drain Current 36 to 225 A, Drain Source Resistance 1.5 milli-ohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.4 to 3.6 V. Tags: Surface Mount. More details for AP4NA1R5HCST can be seen below.

Product Specifications

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Product Details

  • Part Number
    AP4NA1R5HCST
  • Manufacturer
    Advanced Power Electronics Corp
  • Description
    40 V, 36 to 225 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    36 to 225 A
  • Drain Source Resistance
    1.5 milli-ohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.4 to 3.6 V
  • Gate Charge
    88 to 140.8 nC
  • Switching Speed
    11 to 70 ns
  • Power Dissipation
    125 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SPPAK
  • Note
    Input Capacitance :- 7136 pF
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