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FTK0103M

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The FTK0103M from First Silicon is a MOSFET with Continous Drain Current 3 A, Drain Source Resistance 136 to 170 milli-ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 0.8 to 2.0 V. Tags: Surface Mount. More details for FTK0103M can be seen below.

Product Specifications

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Product Details

  • Part Number
    FTK0103M
  • Manufacturer
    First Silicon
  • Description
    100 V, 3 A, N-Channel Enhancement Mode

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    3 A
  • Drain Source Resistance
    136 to 170 milli-ohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    0.8 to 2.0 V
  • Gate Charge
    20 nC
  • Switching Speed
    4 to 20 ns
  • Power Dissipation
    1.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    SOT-89-3L
  • Applications
    Power switching application, Hard switched and high frequency circuits, Uninterruptible power supply
  • Note
    Input Capacitance :- 650 pF
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