1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Advanced Power Electronics Corp
  6. AP5527DT1

AP5527DT1

Request Quote

Note : Your request will be directed to Advanced Power Electronics Corp.

The AP5527DT1 from Advanced Power Electronics Corp is a MOSFET with Continous Drain Current 3.2 to 4.1 A, Drain Source Resistance 72 milli-ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for AP5527DT1 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    AP5527DT1
  • Manufacturer
    Advanced Power Electronics Corp
  • Description
    2.5 W, 100 V, 3.2 to 4.1 A, N-Channel, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    3.2 to 4.1 A
  • Drain Source Resistance
    72 milli-ohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    32 to 51 nC
  • Switching Speed
    7 to 32 ns
  • Power Dissipation
    2.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN5045-12L
  • Note
    Input Capacitance :- 3280 pF
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products