The AP6NA1R2LCXT from Advanced Power Electronics Corp is a MOSFET with Continous Drain Current 39.1 to 233 A, Drain Source Resistance 1.25 to 2.1 milli-ohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2.4 V. Tags: Surface Mount. More details for AP6NA1R2LCXT can be seen below.