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AOM033V120X2Q

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The AOM033V120X2Q from Alpha & Omega Semiconductor is a MOSFET with Continous Drain Current 68 A, Drain Source Resistance 33 to 45 milliohm, Drain Source Breakdown Voltage 1200 V, Gate Source Voltage -8 to 18 V, Gate Source Threshold Voltage 2.8 V. Tags: Through Hole. More details for AOM033V120X2Q can be seen below.

Product Specifications

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Product Details

  • Part Number
    AOM033V120X2Q
  • Manufacturer
    Alpha & Omega Semiconductor
  • Description
    1200 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    68 A
  • Drain Source Resistance
    33 to 45 milliohm
  • Drain Source Breakdown Voltage
    1200 V
  • Gate Source Voltage
    -8 to 18 V
  • Gate Source Threshold Voltage
    2.8 V
  • Gate Charge
    104 nC
  • Power Dissipation
    300 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-247-4L
  • Applications
    xEV Charger, Electric Vehicle Supply Equipment (EVSE), Motor Drives, Automotive Inverters

Technical Documents
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