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3N190

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The 3N190 from CALOGIC is a MOSFET with Continous Drain Current 50 mA, Drain Source Resistance 300 ohm, Drain Source Breakdown Voltage -40 V, Gate Source Voltage -3.0 to -6.5 V, Gate Source Threshold Voltage -2.0 to -5.0 V. Tags: Through Hole. More details for 3N190 can be seen below.

Product Specifications

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Product Details

  • Part Number
    3N190
  • Manufacturer
    CALOGIC
  • Description
    -40 V, 50 mA, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    50 mA
  • Drain Source Resistance
    300 ohm
  • Drain Source Breakdown Voltage
    -40 V
  • Gate Source Voltage
    -3.0 to -6.5 V
  • Gate Source Threshold Voltage
    -2.0 to -5.0 V
  • Switching Speed
    15 to 50 ns
  • Power Dissipation
    525 mW
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Through Hole
  • Package
    TO-99
  • Note
    Input Capacitance :- 4.5 pF

Technical Documents
View details on the manufacturer's website
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