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CMPDM7002AE TR

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CMPDM7002AE TR Image

The CMPDM7002AE TR from Central Semiconductor is a MOSFET with Continous Drain Current 0.3 A, Drain Source Resistance 1000 to 6000 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 1.2 to 2 V. Tags: Surface Mount. More details for CMPDM7002AE TR can be seen below.

Product Specifications

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Product Details

  • Part Number
    CMPDM7002AE TR
  • Manufacturer
    Central Semiconductor
  • Description
    60 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Dimensions
    3.05 x 2.49 x 1.09 mm
  • Number of Channels
    Single
  • Continous Drain Current
    0.3 A
  • Drain Source Resistance
    1000 to 6000 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    1.2 to 2 V
  • Gate Charge
    0.5 nC
  • Power Dissipation
    0.35 W
  • Temperature operating range
    -65 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Applications
    Load/Power switches, DC-DC converter circuits, Power management

Technical Documents
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