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MTB032P06BV8-0-T6-G

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The MTB032P06BV8-0-T6-G from Cystech Electronics is a MOSFET with Continous Drain Current -18 to -4 A, Drain Source Resistance 33 to 66 milli-ohm, Drain Source Breakdown Voltage -60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2.5 to -1 V. Tags: Surface Mount. More details for MTB032P06BV8-0-T6-G can be seen below.

Product Specifications

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Product Details

  • Part Number
    MTB032P06BV8-0-T6-G
  • Manufacturer
    Cystech Electronics
  • Description
    -60 V, -18 to -4 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -18 to -4 A
  • Drain Source Resistance
    33 to 66 milli-ohm
  • Drain Source Breakdown Voltage
    -60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2.5 to -1 V
  • Gate Charge
    13 to 26 nC
  • Switching Speed
    12 to 42 ns
  • Power Dissipation
    27 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN3×3
  • Note
    Input Capacitance :- 1350 pF

Technical Documents
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