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MTB3D6N04RE3-0-UB-G

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The MTB3D6N04RE3-0-UB-G from Cystech Electronics is a MOSFET with Continous Drain Current 18 to 43 A, Drain Source Resistance 4.3 to 8 milli-ohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Through Hole. More details for MTB3D6N04RE3-0-UB-G can be seen below.

Product Specifications

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Product Details

  • Part Number
    MTB3D6N04RE3-0-UB-G
  • Manufacturer
    Cystech Electronics
  • Description
    40 V, 18 to 43 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    18 to 43 A
  • Drain Source Resistance
    4.3 to 8 milli-ohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    13.5 to 27 nC
  • Switching Speed
    13.5 to 40 ns
  • Power Dissipation
    63 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Note
    Input Capacitance :- 1540 pF

Technical Documents
View details on the manufacturer's website
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